Polyfet RF Devices F2012 overview
Polyfet RF Devices F2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:Single,Drain Current-Max (Abs) (ID):3.2 A
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Part number or familyF2012
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Manufactured byPolyfet RF Devices
DescriptionPolyfet RF Devices F2012 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:Single,Drain Current-Max (Abs) (ID):3.2 A
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