Polyfet RF Devices F2001S overview
Polyfet RF Devices F2001S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:Single,Drain Current-Max (Abs) (ID):800 mA
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Part number or familyF2001S
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Manufactured byPolyfet RF Devices
DescriptionPolyfet RF Devices F2001S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Configuration:Single,Drain Current-Max (Abs) (ID):800 mA
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