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MBV109T1

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onsemi MBV109T1

onsemi MBV109T1 overview

ON Semiconductor MBV109T1 Varactor, Diode Capacitance-Nom:29 pF, Power Dissipation-Max:280 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode...

Manufactured byonsemi
Part number or familyMBV109T1
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MBV109T1 Varactor, Diode Capacitance-Nom:29 pF, Power Dissipation-Max:280 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1
DescriptionON Semiconductor MBV109T1 Varactor, Diode Capacitance-Nom:29 pF,Power Dissipation-Max:280 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:SINGLE,Surface Mount:YES,Rep Pk Reverse Voltage-Max:30 V,Number of Elements:1

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