onsemi NVMFS5826NLT3G overview
NVMFS5826NLT3G is a transistor made by onsemi. ON Semiconductor NVMFS5826NLT3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NVMFS5826NLT3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A, Drain-source On Resistance-Max:32 mΩ
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