Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NVMFD5853NLT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:40 V, Number of Elements:2, Drain Current-Max (Abs) (ID):34 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:15 mΩ
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onsemi
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