onsemi NVD5890NT4G overview
ON Semiconductor NVD5890NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Manufactured byonsemi
Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor NVD5890NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):123 A, Drain Current-Max (ID):24 A, Drain-source On Resistance-Max:3.7 mΩ
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Discrete Semiconductor Products
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