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NVB60N06T4G

onsemi · Transistor

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onsemi NVB60N06T4G

onsemi NVB60N06T4G overview

ON Semiconductor NVB60N06T4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...

Manufactured byonsemi
Part number or familyNVB60N06T4G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NVB60N06T4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ

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Product group Transistor Explore Transistor Explore Power Field-effect Transistors
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