onsemi NTMFD4901NFT3G overview
ON Semiconductor NTMFD4901NFT3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NTMFD4901NFT3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):23.4 A, Drain Current-Max (ID):13.5 A, Drain-source On Resistance-Max:3.5 mΩ
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