onsemi NTMD2P01R2G overview
ON Semiconductor NTMD2P01R2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NTMD2P01R2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:16 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.3 A, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:100 mΩ
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