Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTLJS4114NT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):7.8 A, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:45 mΩ
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onsemi
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