onsemi NTLGD3502NT2G overview
ON Semiconductor NTLGD3502NT2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NTLGD3502NT2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):4.3 A, Drain-source On Resistance-Max:60 mΩ
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