Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NDD02N60Z1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):2.2 A, Drain-source On Resistance-Max:4.8 Ω
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onsemi
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