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NDD01N60-1G

onsemi · Transistor

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onsemi NDD01N60-1G

onsemi NDD01N60-1G overview

ON Semiconductor NDD01N60-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...

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Part number or familyNDD01N60-1G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NDD01N60-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.5 A, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:8.5 Ω

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Product group Transistor Explore Transistor Explore Power Field-effect Transistors
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