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MTD20P03HDLT4G

onsemi · Transistor

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onsemi MTD20P03HDLT4G

onsemi MTD20P03HDLT4G overview

ON Semiconductor MTD20P03HDLT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

Manufactured byonsemi
Part number or familyMTD20P03HDLT4G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor MTD20P03HDLT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:99 mΩ

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Product group Transistor Explore Transistor Explore Power Field-effect Transistors
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