onsemi FQU1N60CTU overview
FQU1N60CTU is a transistor made by onsemi. ON Semiconductor FQU1N60CTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor FQU1N60CTU Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:3.4 Ω
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