Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQD2N80TM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.8 A, Drain Current-Max (ID):1.8 A, Drain-source On Resistance-Max:6.3 Ω
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onsemi
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