onsemi NGTG25N120FL2WG overview
ON Semiconductor NGTG25N120FL2WG Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):50 A, Polarity/Chann...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NGTG25N120FL2WG Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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