onsemi NGTB15N60S1EG overview
NGTB15N60S1EG is a transistor made by onsemi. ON Semiconductor NGTB15N60S1EG Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NGTB15N60S1EG Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request