onsemi FGL35N120FTDTU overview
ON Semiconductor FGL35N120FTDTU Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):70 A, Polarity/Channe...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGL35N120FTDTU Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):70 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
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