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FGH80N60FDTU

onsemi ยท Modules

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onsemi FGH80N60FDTU

onsemi FGH80N60FDTU overview

ON Semiconductor FGH80N60FDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):80 A, Polarity/Channel Typ...

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Part number or familyFGH80N60FDTU
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGH80N60FDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):80 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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