onsemi FGH80N60FD2TU overview
ON Semiconductor FGH80N60FD2TU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):80 A, Polarity/Channel Ty...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGH80N60FD2TU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):80 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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