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FGH60N60UFDTU

onsemi ยท Transistor

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onsemi FGH60N60UFDTU

onsemi FGH60N60UFDTU overview

ON Semiconductor FGH60N60UFDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):120 A, Polarity/Channel...

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Part number or familyFGH60N60UFDTU
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGH60N60UFDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):120 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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Product group Transistor Explore Transistor Explore IGBTs
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