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FGD3N60LSDTM

onsemi ยท Modules

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onsemi FGD3N60LSDTM

onsemi FGD3N60LSDTM overview

ON Semiconductor FGD3N60LSDTM Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):6 A, Polarity/Channel Type...

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Part number or familyFGD3N60LSDTM
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGD3N60LSDTM Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1

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