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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDG6332C_F085 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):700 mA, Drain Current-Max (ID):700 mA, Drain-source On Resistance-Max:300 mΩ
DescriptionON Semiconductor FDG6332C_F085 MOSFET, 20V N & P Channel PowerTrench MOSFETs
DescriptionON SEMICONDUCTOR FDG6332C_F085 ON Semiconductor FDG6332C_F085 MOSFET 1 N-channel , P-channel 300 mW SC 70 6
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onsemi
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