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SMS12T3

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onsemi SMS12T3

onsemi SMS12T3 overview

ON Semiconductor SMS12T3 Transient Suppressor, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLT...

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Part number or familySMS12T3
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SMS12T3 Transient Suppressor, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Number of Elements:4, Technology:AVALANCHE
DescriptionON Semiconductor SMS12T3 Transient Suppressor, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Number of Elements:4, Technology:AVALANCHE

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Product group Modules Explore Modules Explore Transient Suppressors
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