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SD12T3

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onsemi SD12T3

onsemi SD12T3 overview

ON Semiconductor SD12T3 Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:14.53 V, Diode Element Material:SIL...

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Part number or familySD12T3
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SD12T3 Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:14.53 V, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:12 V, Number of Elements:1, Technology:AVALANCHE
DescriptionON Semiconductor SD12T3 Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:14.53 V, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:12 V, Number of Elements:1, Technology:AVALANCHE

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Product group Modules Explore Modules Explore Transient Suppressors
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