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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMQA13VT3 Transient Suppressor, Clamping Voltage-Max:18.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:13 V, Diode Element Material:SILICON, Breakdown Voltage-Min:12.35 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:9.8 V, Number of Elements:4, Technology:ZENER
DescriptionON Semiconductor MMQA13VT3 Transient Suppressor, Clamping Voltage-Max:18.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:13 V, Diode Element Material:SILICON, Breakdown Voltage-Min:12.35 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:9.8 V, Number of Elements:4, Technology:ZENER
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