onsemi MMQA12VT3 overview
ON Semiconductor MMQA12VT3 Transient Suppressor, Clamping Voltage-Max:17.3 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:12 V, Diode Element Material:S...
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Manufactured byonsemi
Product typeTransient Suppressor
DescriptionON Semiconductor MMQA12VT3 Transient Suppressor, Clamping Voltage-Max:17.3 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:12 V, Diode Element Material:SILICON, Breakdown Voltage-Min:11.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:9.1 V, Number of Elements:4, Technology:ZENER
DescriptionON Semiconductor MMQA12VT3 Transient Suppressor, Clamping Voltage-Max:17.3 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:12 V, Diode Element Material:SILICON, Breakdown Voltage-Min:11.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:9.1 V, Number of Elements:4, Technology:ZENER
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Transient Suppressor
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