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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MTDF1C02HDR2 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.8 A, Drain Current-Max (ID):1.7 A, Drain-source On Resistance-Max:120 mΩ
DescriptionON Semiconductor MTDF1C02HDR2 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.8 A, Drain Current-Max (ID):1.7 A, Drain-source On Resistance-Max:120 mΩ
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onsemi
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Modules
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