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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 5LN01M Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100 mA, Drain Current-Max (ID):100 mA, Drain-source On Resistance-Max:7.8 Ω
DescriptionON Semiconductor 5LN01M Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100 mA, Drain Current-Max (ID):100 mA, Drain-source On Resistance-Max:7.8 Ω
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onsemi
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Modules
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