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NGD18N40CLBT4G

onsemi ยท Transistor

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onsemi NGD18N40CLBT4G

onsemi NGD18N40CLBT4G overview

ON Semiconductor NGD18N40CLBT4G Igbt, Collector-Emitter Voltage-Max:430 V, Gate-Emitter Thr Voltage-Max:1.9 V, Collector Current-Max (IC):15 A, Polarity/Channel...

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Part number or familyNGD18N40CLBT4G
Product groupTransistor

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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NGD18N40CLBT4G Igbt, Collector-Emitter Voltage-Max:430 V, Gate-Emitter Thr Voltage-Max:1.9 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR NGD18N40CLBT4G IGBT DPAK 400V 18A TR

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Product group Transistor Explore Transistor Explore Semiconductor Explore IGBTs
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