onsemi NGB8206NT4G overview
ON Semiconductor NGB8206NT4G Igbt, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Ty...
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Product groupTransistor
DescriptionON Semiconductor NGB8206NT4G Igbt, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR NGB8206NT4G IGBT D2PAK 350V 20A
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