onsemi NGB15N41CLT4G overview
ON Semiconductor NGB15N41CLT4G Igbt, Collector-Emitter Voltage-Max:440 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel ...
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Product groupTransistor
DescriptionON Semiconductor NGB15N41CLT4G Igbt, Collector-Emitter Voltage-Max:440 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON SEMICONDUCTOR NGB15N41CLT4G IGBT D2PAK 410V 15A TR RoHS Compliant: Yes
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