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MMQA33VT1

onsemi ยท Modules

onsemi MMQA33VT1

onsemi MMQA33VT1 overview

ON Semiconductor MMQA33VT1 Transient Suppressor, Clamping Voltage-Max:48.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:33 V, Diode Element Material:S...

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Part number or familyMMQA33VT1
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMQA33VT1 Transient Suppressor, Clamping Voltage-Max:48.6 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:33 V, Diode Element Material:SILICON, Breakdown Voltage-Min:31.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:25 V, Number of Elements:4, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR MMQA33VT1 Transistor Array IC

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