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MMBD701LT1G

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onsemi MMBD701LT1G

onsemi MMBD701LT1G overview

ON Semiconductor MMBD701LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Diode Type:MIXER D...

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Part number or familyMMBD701LT1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD701LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:SCHOTTKY
DescriptionOn Semi Conductor Silicon Hot-Carrier Diodes, Schottky Barrier Diodes

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