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MJ11029G

onsemi ยท Transistor

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onsemi MJ11029G

onsemi MJ11029G overview

ON Semiconductor MJ11029G Power Bipolar Transistor, Collector-Emitter Voltage-Max:60 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:PNP, Surface Moun...

Manufactured byonsemi
Part number or familyMJ11029G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor MJ11029G Power Bipolar Transistor, Collector-Emitter Voltage-Max:60 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):400
DescriptionON SEMICONDUCTOR MJ11029G Darlington Bipolar Transistor

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Product group Transistor Explore Transistor Explore Semiconductor Explore Power Bipolar Transistors
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