onsemi MGP15N35CL overview
ON Semiconductor MGP15N35CL Igbt, Collector-Emitter Voltage-Max:380 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Typ...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor MGP15N35CL Igbt, Collector-Emitter Voltage-Max:380 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1
DescriptionOn Semiconductor MGP15N35CL Semiconductors
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