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2N6668G

onsemi ยท Transistor

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onsemi 2N6668G

onsemi 2N6668G overview

ON Semiconductor 2N6668G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:PNP, Surface Mount...

Manufactured byonsemi
Part number or family2N6668G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor 2N6668G Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100
DescriptionOn Semiconductor 2N6668G Semiconductors

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Product group Transistor Explore Transistor Explore Semiconductor Explore Power Bipolar Transistors
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