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2N6609G

onsemi ยท Transistor

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onsemi 2N6609G

onsemi 2N6609G overview

ON Semiconductor 2N6609G Power Bipolar Transistor, Collector-Emitter Voltage-Max:140 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:PNP, Surface Moun...

Manufactured byonsemi
Part number or family2N6609G
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor 2N6609G Power Bipolar Transistor, Collector-Emitter Voltage-Max:140 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):5, Transition Frequency-Nom (fT):4 MHz
DescriptionOn Semiconductor 2N6609G Semiconductors

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Product group Transistor Explore Transistor Explore Semiconductor Explore Power Bipolar Transistors
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