onsemi 2N5631G overview
ON Semiconductor 2N5631G Power Bipolar Transistor, Collector-Emitter Voltage-Max:140 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:NPN, Surface Moun...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor 2N5631G Power Bipolar Transistor, Collector-Emitter Voltage-Max:140 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):4, Transition Frequency-Nom (fT):1 MHz
DescriptionOn Semiconductor 2N5631G Semiconductors
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