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SBAS70-04LT1G

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onsemi SBAS70-04LT1G

onsemi SBAS70-04LT1G overview

ON Semiconductor SBAS70-04LT1G Rectifier Diode, Forward Voltage-Max (VF):410 mV, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:RECTIF...

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Part number or familySBAS70-04LT1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor SBAS70-04LT1G Rectifier Diode, Forward Voltage-Max (VF):410 mV, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:70 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionON Semiconductor SBAS70-04LT1G Rectifier Diode, Forward Voltage-Max (VF):410 mV, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:70 V, Number of Elements:2, Technology:SCHOTTKY

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