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RGP10J

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onsemi RGP10J

onsemi RGP10J overview

ON Semiconductor RGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:250 ns, Power Dissipation-Max:3 W, Di...

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Part number or familyRGP10J
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor RGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:250 ns, Power Dissipation-Max:3 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1
DescriptionON Semiconductor RGP10J Discrete Semiconductor, DIODE GEN PURP 600V 1A DO41
DescriptionON Semiconductor RGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:250 ns, Power Dissipation-Max:3 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1

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