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NRVB830MFST1G

onsemi · Modules

onsemi NRVB830MFST1G

onsemi NRVB830MFST1G overview

ON Semiconductor NRVB830MFST1G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):700 mV, Reverse Current-Max:200 µA, Diode Element Material:SIL...

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Part number or familyNRVB830MFST1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NRVB830MFST1G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):700 mV, Reverse Current-Max:200 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionON Semiconductor NRVB830MFST1G Discrete Semiconductor, DIODE SCHOTTKY 30V 8A 5DFN
DescriptionON Semiconductor NRVB830MFST1G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):700 mV, Reverse Current-Max:200 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1, Technology:SCHOTTKY

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