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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MURA210T3G Rectifier Diode, Output Current-Max:2 A, Forward Voltage-Max (VF):940 mV, Reverse Recovery Time-Max:30 µs, Reverse Current-Max:2 µA, Diode Element Material:SILICON, Breakdown Voltage-Min:100 V, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
DescriptionON Semiconductor MURA210T3G Discrete Semiconductor, DIODE GEN PURP 100V 2A SMA
DescriptionON Semiconductor MURA210T3G Rectifier Diode, Output Current-Max:2 A, Forward Voltage-Max (VF):940 mV, Reverse Recovery Time-Max:30 µs, Reverse Current-Max:2 µA, Diode Element Material:SILICON, Breakdown Voltage-Min:100 V, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
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