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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD717LT1G Rectifier Diode, Forward Voltage-Max (VF):370 mV, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:20 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionON Semiconductor MMBD717LT1G Rectifier Diode, Forward Voltage-Max (VF):370 mV, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:20 V, Number of Elements:2, Technology:SCHOTTKY
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onsemi
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