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MBRD660CTT4G

onsemi · Modules

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onsemi MBRD660CTT4G

onsemi MBRD660CTT4G overview

ON Semiconductor MBRD660CTT4G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):900 mV, Reverse Current-Max:100 µA, Diode Element Material:SILI...

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Part number or familyMBRD660CTT4G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MBRD660CTT4G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):900 mV, Reverse Current-Max:100 µA, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:RECTIFIER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionON Semiconductor MBRD660CTT4G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):900 mV, Reverse Current-Max:100 µA, Diode Element Material:SILICON, Breakdown Voltage-Min:60 V, Diode Type:RECTIFIER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:60 V, Number of Elements:2, Technology:SCHOTTKY

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Product group Modules Explore Modules Explore Rectifier Diodes Explore Semiconductors, Discretes
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