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Product groupModules
DescriptionON Semiconductor MBR8H100MFST3G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):900 mV, Reverse Current-Max:2 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1, Technology:SCHOTTKY
DescriptionON Semiconductor MBR8H100MFST3G Discrete Semiconductor, DIODE SCHOTTKY 100V 8A 5DFN
DescriptionON Semiconductor MBR8H100MFST3G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):900 mV, Reverse Current-Max:2 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1, Technology:SCHOTTKY
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