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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor ISL9R860S3ST Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):2 V, Reverse Recovery Time-Max:30 ns, Power Dissipation-Max:85 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1, Technology:AVALANCHE
DescriptionON Semiconductor ISL9R860S3ST Discrete Semiconductor, DIODE GEN PURP 600V 8A TO263-2
DescriptionON Semiconductor ISL9R860S3ST Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):2 V, Reverse Recovery Time-Max:30 ns, Power Dissipation-Max:85 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1, Technology:AVALANCHE
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onsemi
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