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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor ISL9R18120G2 Rectifier Diode, Output Current-Max:18 A, Forward Voltage-Max (VF):3.1 V, Reverse Recovery Time-Max:70 ns, Power Dissipation-Max:125 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:1.2 kV, Number of Elements:1
DescriptionON Semiconductor ISL9R18120G2 Discrete Semiconductor, DIODE GEN PURP 1.2KV 18A TO247
DescriptionON Semiconductor ISL9R18120G2 Rectifier Diode, Output Current-Max:18 A, Forward Voltage-Max (VF):3.1 V, Reverse Recovery Time-Max:70 ns, Power Dissipation-Max:125 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:1.2 kV, Number of Elements:1
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onsemi
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Modules
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