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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor HN2D02FUTW1T1G Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:3 ns, Reverse Current-Max:100 nA, Power Dissipation-Max:300 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:85 V, Number of Elements:3
DescriptionON Semiconductor HN2D02FUTW1T1G Rectifier Diode, Output Current-Max:100 mA, Forward Voltage-Max (VF):1.2 V, Reverse Recovery Time-Max:3 ns, Reverse Current-Max:100 nA, Power Dissipation-Max:300 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:85 V, Number of Elements:3
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onsemi
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